PART |
Description |
Maker |
SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
2SJ215 |
Silicon P-Channel MOS FET(P沟道MOSFET) Silicon P-Channel MOS FET(P娌??MOSFET)
|
Hitachi,Ltd.
|
2SK1405 |
Silicon N-Channel MOS FET(N娌??MOSFET) From old datasheet system Silicon NPN Triple Diffused
|
Hitachi,Ltd.
|
2SK1522-E 2SK1521 2SK1521-E 2SK1522 |
Silicon N Channel MOS FET 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Renesas Electronics Corporation
|
UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FET 6-PIN 2 CIRCUITS MOS Field Effect Transistor From old datasheet system
|
NEC Corp.
|
RQJ0203WGDQA RQJ0203WGDQATL-E |
2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3 Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc. Renesas Electronics Corporation
|
RJK0368DPA-00-J0 RJK0368DPA10 |
20 A, 30 V, 0.0224 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
3SK296ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82A, CMPAK-4 Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4 Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
2SK2084S 2SK2084 2SK2084L |
Power switching MOSFET Silicon N-Channel MOS FET
|
HITACHI[Hitachi Semiconductor]
|
2SK1547-01MR |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 4A条(丁)| TO - 220AB现有 N-CHANNEL SILICON POWER MOS-FET
|
Honeywell International, Inc. FUJI ELECTRIC HOLDINGS CO., LTD.
|