PART |
Description |
Maker |
M45PE80 M45PE80-VMF6G M45PE80-VMF6P M45PE80-VMF6TG |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface 8 Mbit / Low Voltage / Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface 4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪
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http:// STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
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M59DR008F |
8 MBIT (512KB X16, DUAL BANK, PAGE) LOW VOLTAGE FLASH MEMORY
|
ST Microelectronics
|
M45PE40 M45PE40-VMN6G M45PE40-VMN6P M45PE40-VMN6TG |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
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M45PE16-VMW6G M45PE16-VMW6P M45PE16-VMW6TG M45PE16 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
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M45PE10-VMN6P M45PE10-VMN6TP M45PE10-VMP6TG |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
M25PE16 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte-alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48 Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
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http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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M27W202 M27W202-100B6TR M27W202-100F6TR M27W202-10 |
2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM 2兆位128KB的x16低压紫外线可擦写可编程只读存储器和OTP存储 3-Line To 8-Line Decoders/Demultiplexers 16-SOIC 0 to 70 Triple 3-Input Positive-AND Gates 14-SO 0 to 70 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
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NEC TOKIN, Corp.
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UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
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TOKO, Inc. EPCOS AG
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