| PART |
Description |
Maker |
| TBB1005EMTL-H TBB100511 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1017 TBB1017SMTL-E |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1004 |
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB301MAW-TL-E BB301M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB502M11 BB502MBS-TL-H |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| DTC143EKAT146 |
Built-In Biasing Resistors, R1 = R2 = 4.7kW.
|
Rohm
|
| BB301C BB301 |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| BB501C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB402M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Hitachi Semiconductor
|
| BB505C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation.
|
| BB502M BB502 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|
