| PART |
Description |
Maker |
| TM005-020-14-14 |
0.5 - 2 GHz 14 dBm Module
|
Transcom, Inc.
|
| TM020-040-16-20 |
2 - 4 GHz 20 dBm Module
2 ? 4 GHz 20 dBm Module
|
Transcom, Inc.
|
| TM020-040-18-24 |
2 - 4 GHz 24 dBm Module
|
Transcom, Inc.
|
| TM060-180-10-14 |
6 - 18 GHz 14 dBm Gain Module
|
Transcom, Inc.
|
| TM120-155-07-29 |
12 - 15.5 GHz 29 dBm Power Module
|
Transcom, Inc.
|
| TM005-180-09-03 |
0.5 ~ 18 GHz 5 dBm Gain Module
|
Transcom, Inc.
|
| SKY66109-11-15 |
2.4 GHz ZigBee/Smart Energy Front-End Module
Integrated PA with up to plus 22.5 dBm output power
|
Skyworks Solutions Inc.
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TA010-020-15-15 |
1.0 - 2.0 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
| TA160-180-25-27 |
16 - 18 GHz 27 dBm Amplifier
|
Transcom, Inc.
|
