PART |
Description |
Maker |
BU1920 BU1920FS BU1920F |
Audio LSIs > High frequency signal processing > Decoder for RBDS (RDS) RDS / RBDS DECODER
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ROHM[Rohm]
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SAA6581 SAA6581T |
RDS/RBDS demodulator
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NXP Semiconductors PHILIPS[Philips Semiconductors]
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SAA6581HN/V1 SAA6581T/V1 SAA6581HN |
SAA6581; RDS/RBDS demodulator
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NXP Semiconductors Philips
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BUV94 BUV95 BDY46 |
RDS/RBDS processor Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:660Vrms; Voltage Rating DC, Vdc:850VDC; Peak Surge Current (8/20uS), Itm:6500A; Clamping Voltage 8/20us Max :1650V; Peak Energy (10/1000uS):250J; Capacitance, Cd:400pF
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IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω)) N-Channel N沟道
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NXP Semiconductors N.V. TT electronics Semelab Limited Seme LAB
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SSG4512CE SSG4512CE-15 |
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
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SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
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S7878 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V
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Hamamatsu Photonics
|
KDS8958 |
N-Channel 7.0 A, 30 V RDS(ON) = 0.028 RDS(ON) = 0.040 Fast switching speed Dual N & P-Channel PowerTrench MOSFET
|
TY Semiconductor Co., L... TY Semicondutor
|
SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
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SeCoS Halbleitertechnologie GmbH
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