| PART |
Description |
Maker |
| CHA6664-QDG |
12-16GHz 1W High Power Amplifier
|
United Monolithic Semiconductors
|
| HMC592 |
high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| CHA5051-QDG |
7-16GHz Medium Power Amplifier
|
United Monolithic Semiconductors
|
| HV25607 HV256FG-G |
32-Channel High Voltage Amplifi er Array
|
Supertex, Inc
|
| MCH4014 |
High-Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| 2SK93212 2SK932-22-TB-E 2SK932-23-TB-E 2SK932-24-T |
High-Frequency Low-Noise Amplifi er Applications
|
Sanyo Semicon Device
|
| ENA1090A 2SC5374A12 |
VHF to UHF Band OSC, High-Frequency Amplifi er Applications
|
Sanyo Semicon Device
|
| CHA6042-99F_00 CHA6042 CHA6042-99F/00 |
Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Cable Receptacle; Insert Arrangement:16-23
13-16GHz High Power Amplifier
|
UMS[United Monolithic Semiconductors]
|
| CPH3910 |
N-Channel Junctin Silicon FET High-Frequency Low-Noise Amplifi er Applications
|
Sanyo Semicon Device
|
| LMV321 |
General Purpose, Rail-to-Rail Output Amplifi er Rail-to-Rail Amplifi ers
|
Cadeka Microcircuits LLC.
|
| ACPM-5008-BLK ACPM-5008-TR1 |
UMTS Band8 (880-915MHz) 3x3mm Power Amplifi er Module
|
AVAGO TECHNOLOGIES LIMITED
|
| PTMA180402M11 |
Wideband RF LDMOS Integrated Power Amplifi er 40 W, 28 V, 1800 . 2100 MHz
|
Infineon Technologies AG
|
