| PART |
Description |
Maker |
| SHF1103SM SHF1100SM SHF1101SM SHF1102SM |
1 AMP 50 - 300 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR955/3 SDR953/3 SDR954/3 SDR953-3 |
50 AMPS 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
Solid States Devices, Inc.
|
| SDR9105P SDR9103N SDR9103P SDR9104N SDR9104P SDR91 |
100 AMP 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| 1N6639US 1N6639 1N6641US 1N6641 1N6640US 1N6640 |
300 mAmp 75-100 Volts 4 nsec Computer Switching Diode 0.3 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| SR804 SR8010 SR805 SR808 SR802 SR803 |
8Amp schottky barrier rectifier 20-100 volts
|
Shanghai Lunsure Electronic Tech
|
| MUR805 MUR810 MUR820 MUR840 |
8Amp super fast glass passivated rectifier 50to400 volts
|
Shanghai Lunsure Electronic Tech
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| SDR952/3 SDR950/3 SDR951/3 SDR950-3 |
60 AMP 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER 60 A, 100 V, SILICON, RECTIFIER DIODE, TO-3
60 AMP 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER 60安培100 - 200伏特5纳秒超快速整
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| R7014403 R7014404 R7014003 R7014005 R7014405 R7004 |
General Purpose Rectifier (300-550 Amperes Average 4400 Volts) 通用整流器（300-550安培平均4400伏特
|
Air Cost Control
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
Powerex Power Semiconductor...
|
| SDR315 SDR305 SDR307 SDR310 SDR312 |
30 AMP 50-150 VOLTS 50 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SGB20UF SGB35UF SGB10UF SGB15UF SGB25UF SGB30UF |
60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
