| PART |
Description |
Maker |
| HYE18P128160AF-12.5 |
Synchronous Burst CellularRAM (1.5G) CellularRAM
|
infineon
|
| KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung Electronic
Samsung semiconductor
|
| K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
Samsung Electronic
|
| XRD87L99AIQ XRD87L99 |
10-Bit, 2MSPS, CMOS, Low-Power Analog-to-Digital Converter (ADC) with 8-Channel MUX
LOW POWER, 2 MSPS, 10-BIT, A/D CONVERTER WITH 8-CHANNEL MUX
|
EXAR[Exar Corporation]
|
| W966D6HBGX7I-TR |
This is a 64M bit CellularRAM?compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
|
Winbond
|
| MC10H160 MC10H160FN MC10H160L MC10H160P MC10H160M |
12-Bit Parity Generator-Checker
Dual In/Single Out Autoswitching Power MUX, Auto Sw, Adj. Cur Limit, Adj. Vol Threshold, Sw Status 8-TSSOP -40 to 85
Autoswitching Power Mux 8-SON -40 to 85 10H SERIES, 12-BIT PARITY GENERATOR/CHECKER, TRUE OUTPUT, CDIP16
|
ONSEMI[ON Semiconductor]
|
| MC100E155FN MC100E155FNR2 MC10E155FN MC10E155FNR2 |
5V ECL 6−Bit 2:1 Mux−Latch 10E SERIES, LOW LEVEL TRIGGERED D LATCH, TRUE OUTPUT, PQCC28
5V ECL 6−Bit 2:1 Mux−Latch
|
ONSEMI[ON Semiconductor]
|
| PI3L301DA |
3.3V, 16-Bit to 8-Bit, Mux / Demux Gigabit Ethernet Lan Switch (Single Enable)
|
PERRICOM
|
| HYE18P32160AC-96 HYE18P32160AC HYE18P32160AC-125 H |
32M Synchronous Burst CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| IDT74FST163233PA IDT74FST163233PF IDT74FST163233PV |
16-BIT 2:1 MUX/DEMUX SWITCH CBT/FST/QS/5C/B SERIES, DUAL 8-BIT EXCHANGER, TRUE OUTPUT, PDSO56
|
Integrated Device Technology, Inc.
|
