| PART |
Description |
Maker |
| EM42BM1684LBA-75F EM42BM1684LBA |
512Mb (8M】4Bank】16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| DOM40S3R288 DOM40S3R080 |
40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 40Pin盘模块Min.16MBMax.512MB，真IDE接口
|
Hanbit Electronics Co., Ltd.
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TS512MJFV30 |
512MB USB2.0 JetFlash垄芒V30
512MB USB2.0 JetFlash?V30
|
Transcend Information. Inc.
|
| HD68450Y-6 HD68450Y-8 HD68450-10 |
DMA Controller
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Solder Termination DMA控制
|
Omron Electronics, LLC
|
| ESMMC128 ESMMC512 ESMMC256 ESMMC64 |
64MB/128MB/256MB/512MB MultiMediaCard⑩
64MB/128MB/256MB/512MB MultiMediaCard?/a>
64MB/128MB/256MB/512MB MultiMediaCard垄芒
|
Eorex Corporation
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| EM48BM1644LBA-8FE EM481M1644LBA-75FE EM482M1644LBA |
512Mb (8M】4Bank】16) Synchronous DRAM
512Mb (8M×4Bank×16) Synchronous DRAM
512Mb (8M?4Bank?16) Synchronous DRAM
512Mb (8M隆驴4Bank隆驴16) Synchronous DRAM
|
http://
Eorex Corporation
|
| BD11600NUX BD11601NUX |
USB Switch ICs DPDT Type (Double Pole Double Throw)
|
Rohm
|
| NX3DV42GM NX3DV42GU |
Dual high-speed USB 2.0 double-pole double-throw analog
|
NXP Semiconductors
|
| 1300940224 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
| 1300940212 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
