| PART |
Description |
Maker |
| AN720 |
Si9986 Buffered H-Bridge
|
Vishay
|
| AN737 |
Si9988 Buffered H-Bridge
|
Vishay
|
| LTC3201 LTC5505-1 LTC5505-1ES5 LTC5505-2 LTC5505-2 |
RF Power Detector with Buffered Output and 40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C 300 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, 18 dBm INPUT POWER-MAX
|
LINER[Linear Technology]
Linear Technology, Corp.
|
| 1KAB20E 1KAB100E 1KAB80E 1KAB-E 1KAB10E 1KAB40E 1K |
200V Bridge in a D-38 package
50V Bridge in a D-38 package
1000V Bridge in a D-38 package
100V Bridge in a D-38 package
400V Bridge in a D-38 package
600V Bridge in a D-38 package
800V Bridge in a D-38 package
1.2 amp rectifier bridge
|
http://
IRF[International Rectifier]
|
| CD4001BC CD4001BCM CD4001BCN CD4001BCSJ CD4011BCM |
Quad 2-Input NOR Buffered B Series Gate 4000/14000/40000 SERIES, QUAD 2-INPUT NOR GATE, PDIP14
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate
|
Fairchild Semiconductor, Corp.
|
| GMM77332280CNTG GMM77316280CTG |
32Mx72|3.3V|5/6|x36|FP/EDO DRAM - 256MB Buffered DIMM 32Mx72 | 3.3 | 5 / 6 | x36 |计划生育/ EDO公司的DRAM - 256MB的缓冲DIMM
16Mx72|3.3V|5/6|x 18|FP/EDO DRAM - 128MB Buffered DIMM
|
Linear Technology, Corp.
|
| GBU8M GBU8J-BP GBU8K-BP GBU8M-BP GBU8J GBU8D-BP GB |
8 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 8A 400V GBU 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 600V GBU 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 800V GBU 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 50V GBU 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 8A 100V GBU 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| 4GBU005 4GBU01 4GBU02 4GBU04 4GBU06 4GBU08 |
600V Bridge in a GBU package 600V的大桥在GBU
50V Bridge in a GBU package 50V桥一GBU
800V Bridge in a GBU package
400V Bridge in a GBU package
200V Bridge in a GBU package
100V Bridge in a GBU package
|
Cornell Dubilier Electronics, Inc.
International Rectifier
|
| 110MT160K 110MT160KB 110MT160MT 90MT80KB 110MT100K |
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
1200V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
800V 3 Phase Bridge in a INT-A-Pak package
THREE PHASE BRIDGE
CAP 3300PF 100V 100V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 三相桥式
3 PHASE, 90 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| AD8118-EVAL AD8117-EVAL |
600 MHz, 32 32 Buffered Analog Crosspoint Switch 600兆赫22缓冲模拟交叉点开
600 MHz, 32 ??32 Buffered Analog Crosspoint Switch
|
Analog Devices, Inc.
|
| AD5040 AD5063 AD5062 AD5060 AD5061 AD5060ARJZ-2REE |
Full Accurate 3 V/5 V 14-Bit Vout nanoDAC™ Converter, Output Buffered, in a Sot 23
Full Accurate 3 V/5 V 16-Bit Vout nanoDAC™ Converter, Output Buffered, in a Sot 23
Full Accurate 14/16 Bit Vout nanoDac Buffered 3V/5V Sot 23
Full Accurate 14/16 Bit Vout nanoDac Buffered, 3V/5V, Sot 23
|
AD[Analog Devices]
Analog Devices, Inc.
|
