| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
| 04023J0R1PBWTR 06035J1R8BBTTR 02011J4R7CASTR 06033 |
CAP CERAMIC .1PF 25V 0402 RF SMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000001 uF, SURFACE MOUNT, 0402
CAP CERAMIC 1.8PF 50V 0603 RFSMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 50 V, 0.0000018 uF, SURFACE MOUNT, 0603
Thin-Film Technology
Thin-Film RF/Microwave Capacitors
|
AVX, Corp.
AVX Corporation
|
| NPT35050A |
Gallium Nitride 28V, 65W RF Power Transistor
|
M/A-COM Technology Solution...
|
| NPT2010 |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| NPT2021-DC-2P2GHZ-50W NPT2021-15 |
Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| MFE201 MFE202 MFE203 |
N-CHANNEL DUAL-GAE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Motorola, Inc
|
| NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor
Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| RFP-20-50TPR |
Flanged Terminations
|
Anaren Microwave
|
| RFP-100-50TW |
Flanged Terminations
|
Anaren Microwave
|
|
