PART |
Description |
Maker |
GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM 85ns; Ultra low power 128K x 16 CMOS SRAM 55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
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P3C1024L70SC P3C1024L70SI P3C1024L70TC P3C1024L70T |
ULTRA LOW POWER 128K x 8 CMOS STATIC RAM
|
Pyramid Semiconductor Corporation
|
N02L1618C1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 8 bit
|
ON Semiconductor
|
V62C3801024L-100T V62C3801024LL-85V V62C3801024L V |
High Temp Tested PC357N5TJ00F Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM
|
MOSEL[Mosel Vitelic Corp] MOSEL[Mosel Vitelic, Corp] Mosel Vitelic, Corp.
|
V62C3162048LL-70T V62C3162048LL-35T V62C3162048LL- |
Ultra Low Power 128K x 16 CMOS SRAM 128K的超低功耗16 CMOS SRAM
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] MOSEL[Mosel Vitelic Corp]
|
IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM From old datasheet system 55ns; 5V; 128K x 8 low power CMOS static RAM 35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
IS62C1024L-35WI IS62C1024L-45WI |
35ns; 5V; 128K x 8 low-power CMOS static RAM 45ns; 5V; 128K x 8 low-power CMOS static RAM
|
ICSI
|
AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100 LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100 LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail 3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp. Sharp Corporation Sharp Electrionic Components Sharp Electronics Corp.
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