| PART |
Description |
Maker |
| ISL9V5036S3SNL ISL9V5036P3F085 |
360V EcoSPARK 500mJ N-Channel Ignition IGBT 46 A, 420 V, N-CHANNEL IGBT, TO-263AB
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
|
Fairchild Semiconductor, Corp.
|
| ISL9V5036P3 ISL9V5036S3ST ISL9V5036S3 |
EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
|
Fairchild Semiconductor
|
| HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL |
14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs
14A 360V N-Channel Logic Level Voltage Clamping IGBTs
14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS
14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N沟道,逻辑电平,电压箝位绝缘栅双极型晶体)
|
INTERSIL[Intersil Corporation]
|
| CE2766 |
6-Channe Audio DAC
|
CEI
|
| HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL HGT1S |
DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL
DIODE ZENER SINGLE 500mW 39Vz 3.2mA-Izt 0.05 0.1uA-Ir 32Vr DO35-GLASS 5K/AMMO
14A 360V N-Channel Logic Level Voltage Clamping IGBTs
14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FGD3440G2 |
EcoSPARK?2 335mJ, 400V, N-Channel Ignition IGBT
|
Fairchild Semiconductor
|
| FGD4536 |
360V, PDP IGBT
|
Fairchild Semiconductor
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
| NIMD6302R2 |
HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET
HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET
|
ONSEMI[ON Semiconductor]
|
| FGD4536 FGD4536TM |
360V PDP Trench IGBT
360 V PDP Trench IGBT
|
Fairchild Semiconductor
|
| IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
21 A, 60 V, 0.042 ohm, N-CHANNE
28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
JST Mfg. Co., Ltd.
Vishay Intertechnology, Inc.
Austin Semiconductor, Inc
|
|
