| PART |
Description |
Maker |
| CY8C42223-24SXI CY8C42223-24SXIT CY8C42423-24LFXI |
MULTIFUNCTION PERIPHERAL, PDSO8
Power PSoC?/a> Devices
Power PSoC Devices
|
CYPRESS SEMICONDUCTOR CORP
http://
|
| CY8C21123 CY8C2112311 CY8C21123-24SXIT CY8C21323-2 |
PSoC Programmable System-on-Chip Low power at high speed
PSoC(R) Programmable System-on-Chip(TM); Analog PSoC Blocks: 4; Digital PSoC Blocks: 4; Memory Size: 4 KB; Temperature Range: -40 to 85 C MULTIFUNCTION PERIPHERAL, PDSO8
PSoC™ Mixed-Signal Array CY8C21123, CY8C21223, and CY8C21323 MULTIFUNCTION PERIPHERAL, QCC24
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SST32HF164-90-4C-L3K SST32HF164-70-4C-L3K SST32HF1 |
PSoC® Mixed-Signal Array
Spread Spectrum Clock Generator
PSOC POD FOR CY8C21X34
64-Kbit (8K x 8) Static RAM
MIXED MEMORY|SRAM EEPROM|CMOS|BGA|48PIN|PLASTIC 混合存储器|静态存储器EEPROM中|的CMOS | BGA封装| 48PIN |塑料
|
Silicon Storage Technology, Inc.
Microchip Technology, Inc.
|
| CY8C27143-24PI CY8C27243-24PI CY8C27243-24PVI CY8C |
PSoCâ„¢ Mixed Signal Array
PSoC™ Mixed Signal Array
|
Cypress
|
| PLC18V8ZIADH PLC18V8ZIDB PLC18V8Z25A PLC18V8ZIAA P |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
Zero standby power CMOS versatile PAL devices OT PLD, 25 ns, PQCC20
Zero standby power CMOS versatile PAL devices OT PLD, 40 ns, PDSO20
Zero standby power CMOS versatile PAL devices OT PLD, 25 ns, PDSO20
|
NXP Semiconductors N.V.
|
| PSOC CY8C26643-24PVI CY8C26643-24PI CY8C26643-24AI |
8-Bit Programmable System-on-Chip (PSoC Microcontrollers MULTIFUNCTION PERIPHERAL, PDIP20
8-Bit Programmable System-on-Chip (PSoC Microcontrollers MULTIFUNCTION PERIPHERAL, PDSO20
8-Bit Programmable System-on-Chip (PSoC? Microcontrollers
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| MAX5941A06 MAX5941A MAX5941B MAX5941ACSE-T |
IEEE 802.3af-Compliant Power-Over-Ethernet Interface/PWM Controller for Power Devices 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
|
Maxim Integrated Products, Inc.
|
| CY3217 |
PSoC MiniProg
|
Cypress Semiconductor
|
| TS250-130F-RC-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
