PART |
Description |
Maker |
CY7C1379C CY7C1355C-100AXC CY7C1355C-100AXI CY7C13 |
9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL?/a> Architecture
|
Cypress Semiconductor
|
CY7C1361C-117BGI CY7C1361C-117AXI CY7C1361C-117AXC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1363C-133BZC CY7C1363C-100BZI CY7C1363C-100BGC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
|
IDT[Integrated Device Technology]
|
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|
AS7C33256FT18B AS7C33256FT18BV.1.4 AS7C33256FT18B- |
3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 8 ns, PQFP100 3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 10 ns, PQFP100 3.3V 256K x 18 Flow Through Synchronous SRAM 256K X 18 STANDARD SRAM, 6.5 ns, PQFP100 Sync SRAM - 3.3V From old datasheet system
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存) 256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
CY7C1041CV33-12ZSXE CY7C1041CV3308 CY7C1041CV33-10 |
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 256K X 16 STANDARD SRAM, 10 ns, PDSO44 4-Mbit (256K x 16) Static RAM
|
Cypress Semiconductor, Corp.
|
AS5SS256K18DQ-10/IT AS5SS256K18DQ-10/XT AS5SS256K1 |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru 256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through 256K x 18 SSRAM Synchronous Burst SRAM. Flow-Through 256 × 18的SSRAM同步突发静态存储器。流通过
|
Austin Semiconductor, Inc
|
GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM 180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
IDT Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
|
CY14B104L-BV45XIT CY14B104N-BV45XCT CY14B104N-BV45 |
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44 4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|