| PART |
Description |
Maker |
| CY7C1297A1-50AC CY7C1297A-50AC CY7C1297A-66AC GVT7 |
Memory : Sync SRAMs
64K X 18 Synchronous Burst SRAM
|
Cypress Semiconductor
|
| CY7C1443AV25 |
Memory : Sync SRAMs
|
Cypress
|
| CY7C4282V03 CY7C4282V-10ASC CY7C4282V-15ASC CY7C42 |
Memory : FIFOs
64K/128K x 9 Low-Voltage Deep Sync FIFOs with Retransmit and Depth Expansion
|
Cypress Semiconductor
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| GS864436B-166I GS864472C-166 GS864418B-150I GS8644 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| W29EE512P-70B W29EE512Q-70B W29EE512Q-90 W29EE512P |
BOX 2.53X1.73X.65 W/3 BTNS ALMOND
64K X 8 CMOS FLASH MEMORY 64K X 8 FLASH 5V PROM, 90 ns, PDSO32
64K X 8 CMOS FLASH MEMORY 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| GS864018T-167IV GS864018T-167V GS864018T-200IV GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8320E36T-250 GS8320E36T-150 GS8320E36T-150I GS83 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
http://
|
