PART |
Description |
Maker |
MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L,S BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册,S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
HWL26NPA |
L-Band GaAs POWER FET
|
Hexawave, Inc
|
HWL30YRF HWL30YRF-V1-15 |
L-Band GaAs Power FET
|
Hexawave, Inc
|
HWL27YRA |
L-Band GaAs Power FET
|
Hexawave, Inc
|
HWL34YRF |
L-Band GaAs Power FET
|
Hexawave, Inc
|