| PART |
Description |
Maker |
| PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW
|
NXP Semiconductors
|
| PBSS5160U PBSS5160U115 |
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT323 (SC-70); Container: Tape reel smd 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS302PZ |
20 V, 5.5 A PNP low VCEsat (BISS) transistor 20伏，5.5安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS3540M PBSS3540M315 |
40 V, 0.5 A PNP low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips
|
| PUMB2 PEMB2-PUMB2-15 |
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
PNP/PNP resistor-equipped transistors R1 = 47 k? R2 = 47 k?
|
NXP Semiconductors
|
| PBSS5560PA PBSS5560PA-15 |
60 V, 5 A PNP low V_CEsat (BISS) transistor 5000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
60 V, 5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBLS6021D |
60 V, 1.5 A PNP BISS loadswitch 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS5230PAP |
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS5160PAP |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBLS4004V PBLS4004Y |
40 V PNP BISS loadswitch
|
NXP Semiconductors
|
|
