| PART |
Description |
Maker |
| ADN3000-06 |
6.144 Gbps Transimpedance Amplifier with Integrated Photodiode
|
Analog Devices
|
| SPS-4310RW-CXX0G |
6.144 Gbps / CWDM / 10 km Digital DiagnosticMulti-Rate CPRI SM SFP
|
Optoway Technology Inc
|
| SPB-4820ARLWG SPB-4820RLWG SPB-4820BRLWG |
6.144 Gbps / 1270 nm TX / 1330 nm RX / 20 km Digital DiagnosticMulti-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| UPD16664 |
144/160/184/208-OUTPUT LCD COLUMN SEGMENT DRIVER WITH RAM 144/160/184/208-OUTPUT液晶柱段驱动与RAM
|
NEC, Corp.
|
| M57715 M57715R 57715R |
144-148MHz 12.5V /13W /FM MOBILE RADIO
144-148MHz 12.5V,13W,FM MOBILE RADIO
144-148MHZ, 12.5V, 13W, FM MOBILE RADIO
144-148MHz 12.5V13WFM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57737 |
144-148 MHz, 12.5V, 30W, FM Mobile Radio
144-148MHz 12.5V,30W,FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| M67746 67746 |
From old datasheet system
144-148MHz / 12.5V / 60W / FM MOBILE RADIO
RF POWER MODULE 144-148MHz, 12.5V, 60W, FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| A23W8308 A23W8308L A23W8308H A23W8308M |
262,144 X 8 BIT CMOS MASK ROM
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM
|
AMIC Technology
|
| M57726 57726 |
144-148MHz 12.5V,43W,FM MOBILE RADIO
From old datasheet system
144-148MHZ, 12.5V, 43W, FM MOBILE RADIO
144-148MHz 12.5V /43W /FM MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
