| PART |
Description |
Maker |
| SPLMN81G2 |
Passively Cooled Diode Laser Bar, 50 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMY81G2 |
Passively Cooled Diode Laser Bar, 45 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN98X2 |
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMY81S9 |
Passively Cooled Diode Laser Bar, 140 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN81X2 |
808 nm, LASER DIODE
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| LSC2110-622-ST LSC2110-622 LSC2110-622-BI LSC2110- |
2.5 mW 14 Pin DIL Cooled Laser Module
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| MP04DD810-30-W3A MP04DD810 MP04DD810-24-W2 MP04DD8 |
Dual Rectifier Diode Water Cooled Module Preliminary Information 885 A, 3000 V, SILICON, RECTIFIER DIODE
Dual Rectifier Diode Water Cooled Module Preliminary Information 885 A, 2400 V, SILICON, RECTIFIER DIODE
Dual Rectifier Diode Water Cooled Module Preliminary Information 885 A, 2800 V, SILICON, RECTIFIER DIODE
|
http://
DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Dynex Semiconductor, Ltd.
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
