| PART |
Description |
Maker |
| BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB
Silicon N-Channel MOSFET Triode
|
INFINEON[Infineon Technologies AG]
|
| BF2040R BF2040W BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| GFC360 |
N Channel Power MOSFET with high VDS
|
Gunter Seniconductor GmbH.
|
| KI1304BDL |
TrenchFET Power MOSFET 100 Rg Tested Drain-source voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|
| KO8822 |
VDS (V) = 20V Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., L...
|
| SP8855 SP8855E |
2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
|
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
|
| ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
|
http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| ST93C46A ST93C46AB1013TR ST93C46AB1TR ST93C46AB301 |
From old datasheet system
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No
MOSFET, P TSOP-6MOSFET, P TSOP-6; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:TSOP-6; Current, Id cont:4.5A; Current, Idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
Circular Connector; No. of Contacts:13; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:10-13
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 1628 × 8 MICROWIRE的串行EEPROM
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM 000 64 x 16128 × 8 MICROWIRE的串行EEPROM
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| NJU26106 |
ProLogicII / VDS / BM / Noise Generator / QFP32-R1
|
JRC
|
| KI1553DL |
PIN Configuration Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., L...
|
| KXU03N25 |
VDS (V) = 250V RDS(ON) 2 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
