| PART |
Description |
Maker |
| IGC142T120T6RH |
IGBT4 High Power Chip
|
Infineon Technologies AG
|
| LTR1010 |
High Power Chip Resistors
|
Rohm
|
| SC3-33KFI SC3-33KGI SC3-33KJI SC3-33RFI SC3-E96FI |
High Power Chip Resistors
|
TT Electronics.
|
| IDC73D120T6H |
Diode EMCON 4 High Power Chip
|
Infineon Technologies AG
|
| H2A1-H490 |
High Power single chip LED
|
Roithner LaserTechnik G...
|
| H2A1-H420 |
High Power single chip LED
|
Roithner LaserTechnik G...
|
| H2A1-H435 |
High Power single chip LED
|
Roithner LaserTechnik G...
|
| H2A1-H880 |
High Power single chip LED
|
Roithner LaserTechnik G...
|
| H2A1-H1020 |
IR High Power single chip LED
|
Roithner LaserTechnik G...
|
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| EP7312-IV-C EP7311-IV-C EP7311-EB-C EP7311-IB-C EP |
GT 3C 3#16S PIN PLUG 高性能，低功率系统，片上内存和增强的数字音频接
HIGH-PERFORMANCE, LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 32-BIT, 74 MHz, RISC MICROCONTROLLER, PQFP208
HIGH-PERFORMANCE, LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 高性能，低功率系统，片上内存和增强的数字音频接
|
Cirrus Logic, Inc.
|
| NCCW022S |
High Power Chip Type White LED
|
Nichia Chemical Industries
|
