| PART |
Description |
Maker |
| NR8360JP-BC |
InGaAs APD for OTDR applications. With FC-UPC connector.
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
NEC
CEL[California Eastern Labs]
|
| NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应
NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc.
California Eastern Labs
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5N143DS |
InGaAs-APD/Preamp Receiver
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| C30659-900-1060-1550NM |
Silicon and InGaAs APD Preamplifier Modules
|
Perkin Elmer Optoelectronics
|
| C30659-900-R5B C30659-900-R8A C30659-1060-R8B |
Silicon and InGaAs APD Preamplifier Modules 铟镓砷硅和APD的前置放大器模块
|
PerkinElmer Inc.
PerkinElmer, Inc.
|
| FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NR8300FP-CC-AZ NR8300FP-CC07 |
NECs 30 Um InGaAs APD IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATION AND OTDR APPLICATIONS
|
California Eastern Labs
|
| NR8300FP-CC |
NECs 30 Um InGaAs APD IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATION AND OTDR APPLICATIONS 邻舍30嗯铟镓砷APD的同轴与光纤通信和光时域反射应用工具
|
California Eastern Laboratories, Inc.
NEC
CEL[California Eastern Labs]
|
| PD500 PD500-1XX PD500-0XX |
500μm InGaAs Photodiode
500レm InGaAs Photodiode
500?? InGaAs Photodiode
|
ANADIGICS[ANADIGICS, Inc]
|
| PD-1310-XF PD-1310-XFA PD-1310-VSA PD-1310-VX PD-1 |
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL 铟镓砷铟镓砷针放电模块PIN光电二极管与单模光纤尾纤
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
