| PART |
Description |
Maker |
| PE15A1005 |
40 dB Gain, 1.5 dB NF, 15 dBm, 1.2 GHz to 1.4 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| CGD1042H CGD1042H-2015 |
1 GHz, 23 dB gain high output power doubler
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| LD7215 LD7215C LD7215D |
6 GHz / 3 kW / HELIX TYPE / PPM FOCUSING / HIGH POWER GAIN / FLAT GAIN VARIATION
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION 6千兆赫，3千瓦，螺旋式，分之为重点，高功率增益平坦增益变化
|
NEC Corp.
NEC, Corp.
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SST12LF09-Q3CE |
2.4 GHz High-Gain, High-Efficiency Front-end Module
|
Microchip Technology
|
| RFMA5880-0.5W-Q7 |
5.8 - 8.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| AMMP-5620-BLKG AMMP-5620-TR1G AMMP-562013 AMMP-562 |
6 ?20 GHz High Gain Amplifier in SMT Package
|
AVAGO TECHNOLOGIES LIMITED
|
| LD7215W |
6 GHz / 3 kW CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz, 3 kW CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC[NEC]
|
