| PART |
Description |
Maker |
| OM6N100SA OM5N100SA OM3N100SA OM3N100ST OM1N100SA |
1000V; up to 6 Amp, N-channel MOSFET
1000V Single N-Channel Hi-Rel MOSFET in a D3 package
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE
|
Omnirel
International Rectifier
ETC
List of Unclassifed Manufacturers
|
| STU7NB100 6508 |
N - CHANNEL 1000V - 1.2 - 7.3A - Max220 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STF5NK100Z STP5NK100Z W5NK100Z F5NK100Z P5NK100Z S |
N-channel 1000V - 2.7з - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESHPower MOSFET N沟道1000V - 2.7з - 3.5A TO-220/TO-220FP/TO-247齐保护SuperMESH⑩功率MOSFET
N-channel 1000V - 2.7з - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH⑩ Power MOSFET
N-channel 1000V - 2.7 - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH Power MOSFET
N-channel 1000V - 2.7?/a> - 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH?/a> Power MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| SCD4003 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| TB8S TB2S TB10S TB4S |
Voltage 200V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| KBU4K KBU4J |
VOLTAGE 50V ~ 1000V 4.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| GBJ8005 GBJ800511 GBJ810 |
Voltage 50V ~ 1000V 8.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RS807G RS806G RS801G RS802G |
VOLTAGE 50V ~ 1000V 8.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| HI4-0508A-8 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection; Temperature Range: -55°C to 125°C; Package: 20-LCC 8-CHANNEL, SGL ENDED MULTIPLEXER, CQCC20
|
Intersil, Corp.
|
| NDS9952ANL |
Dual N & P-Channel Enhancement Mode Field Effect Transistor 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
