| PART |
Description |
Maker |
| HGTP3N60A4D HGTP3N60A4D9A HGT1S3N60A4DS HGT1S3N60A |
600V, SMPS Series N-Channerl IGBT with Anti-Paralle Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| RJH60D0DPM RJH60D0DPM-00-T1 |
Silicon N Channel IGBT Application: Inverter
45 A, 600 V, N-CHANNEL IGBT
|
Renesas Electronics Corporation
|
| MIG20J906E MIG20J906EA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| MG75J1ZS40 E002382 |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
| MG600Q2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
