| PART |
Description |
Maker |
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| TPCP8602 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications
|
Toshiba Semiconductor
|
| E000975 2SC4682 |
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba
|
| 2SC4683 |
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SA131407 2SA1314 |
Strobe Flash Applications Audio Power Applications
|
Toshiba Semiconductor
|
| 2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| GT5G10306 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT8G13206 GT8G132 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT20G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
