| PART |
Description |
Maker |
| HYS72T1G242EP-3.7-C |
240-Pin Dual Die Registered DDR2 SDRAM Modules 1G X 72 DDR DRAM MODULE, 0.7 ns, DMA240
|
Qimonda AG
|
| HYS72T512022HR-3.7-A HYS72T512022HR-3S-A HYS72T512 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYB18T1G400BF |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T256000ER-3.7-B HYS72T256000ER-5-B HYS72T2560 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64020HR-2.5-A HYS72T64020HR-3-A HYS72T64020H |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64301HP-3.7-A |
240-Pin Registered DDR2 SDRAM Modules 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Qimonda AG
|
| HYS72T256000ER-3.7-B |
240-Pin Registered DDR2 SDRAM Modules 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Qimonda AG
|
| M393T6553CZA-CE7 M393T2950CZ3-CCC M393T2950CZ3-CD5 |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC
|
SAMSUNG[Samsung semiconductor]
|
| M312L5128MT0 M312L5128MT0-CA0 M312L5128MT0-CA2 M31 |
DDR SDRAM Registered Module ( TSOP-II ) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 0702871037 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 78 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 70287-1005 0702871005 |
2.54mm (.100") Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 14 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 14 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
