| PART |
Description |
Maker |
| HYS72T512022EP-3S-B |
240-Pin Dual Die Registered DDR2 SDRAM Modules 512M X 72 DDRAM MOD, 0.5 ns, DMA240
|
Qimonda AG
|
| HYS72T128020HP-3S-A |
240-Pin Registered DDR2 SDRAM Modules
|
Infineon Technologies Corporation
|
| HYS72T256000ER-3.7-B HYS72T256000ER-5-B HYS72T2560 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64020HR-2.5-A HYS72T64020HR-3-A HYS72T64020H |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64301HP-3.7-A |
240-Pin Registered DDR2 SDRAM Modules 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Qimonda AG
|
| HYS72T128020HR-3-A |
240-Pin Registered DDR2 SDRAM Modules 128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240
|
Infineon Technologies AG
|
| M393T6553BZ3-CD5_CC M393T2950BG0-CD5_CC M393T2950B |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 70287-1007 0702871007 |
2.54mm (.100") Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 18 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 18 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 70287-1022 0702871022 |
2.54mm (.100") Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 48 Circuits, 6.10mm (.240") Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 48 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 0702871217 70287-1217 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 46 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective
2.54mm (.100") Pitch C-Grid垄莽 Header, Breakaway, Dual Row, Vertical, with RetentionPin, 46 Circuits, 6.10mm (.240") Mating Pin Length, 0.76楼矛m (30楼矛") Gold (Au)
|
Molex Electronics Ltd.
|
|
