| PART |
Description |
Maker |
| IRS23364D IRS23364DJPBF IRS23364DJTRPBF IRS23364DP |
HIGH VOLTAGE 3 PHASE GATE DRIVER IC
|
International Rectifier
|
| 2SK3712 |
High voltage: VDSS = 250 V Gate voltage rating: -30 V Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| IW4071B |
Quad 2-Input OR Gate High-Voltage Silicon-Gate CMOS 输入或门高压硅栅CMOS
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| KK4012B KK4012BD KK4012BN |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK4023B |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| KK4011B |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| KK4030B KK4030BD KK4030BN |
Quad Exclusive-OR Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK4081B KK4081BD KK4081BN |
Quad 2-Input AND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK4025B KK4025BD KK4025BN |
Triple 3-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| A6276ELP-T A6276EA-T A6276SLWTR-T 6276_03 A6276ELP |
16-BIT SERIAL-INPUT, CONSTANT CURRENT LATCHED LED DRIV ER
|
ALLEGRO[Allegro MicroSystems]
|
| IW4001B IW4001BD IW4001BN |
Quad 2-input NOR gate, high-voltage silicon-gate CMOS
Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
ETC[ETC]
INTEGRAL JOINT STOCK COMPANY
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
