PART |
Description |
Maker |
BY251 BY252 BY253 BY255 BY254 |
MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)
|
PANJIT[Pan Jit International Inc.]
|
ER2A |
SURFACE MOUNT SUPERFAST RECTIFI ER VOLTAGE - 50 to 600 Volts CURRENT - 2.0 Ampere
|
Yea Shin Technology Co., Ltd
|
BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE. 50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE. ; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA ; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A ; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
Continental Device India Limited
|
CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
|
CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y 10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O 10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
|
Continental Device India Limited
|
DBB08 DBB08G-TM-E |
0.8A Single-Phase Bridge Rectifi er
|
ON Semiconductor
|
APT30DL60B APT30DL60BG APT30DL60S APT30DL60SG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
APT30DL60BCT APT30DL60BCTG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
CPD34X CPD31X |
10A, 60V Schottky Rectifi er Die
|
Central Semiconductor Corp Central Semiconductor C...
|
CD214A-B240LLF |
Schottky Barrier Rectifi er Chip Diode
|
Bourns Electronic Solut...
|
CBRLDSH2-60CBRLDSH2-100 |
2.0A, 60V and 100V Bridge Rectifi ers
|
Central Semiconductor Corp
|
APT2X101DL40J |
Ultrafast Soft Recovery Dual Rectifi er Diode
|
Microsemi Corporation
|