| PART |
Description |
Maker |
| GMM27316230ETG GMM27316233ENTG-7K |
x72 SDRAM Module x72内存模块
16Mx72|3.3V|75/7K|x18|SDR SDRAM - Registered DIMM 128MB 16Mx72 | 3.3 | 75/7K | x18 | SDRAM的特别提款权-注册128MB的内
|
ITT, Corp.
Mini-Circuits
|
| HYMD216726A6J-J HYMD216726AL6J-J |
Unbuffered DDR SO-DIMM
16Mx72|2.5V|J|x5|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| W3DG7216V-AD1 W3DG7216V7AD1 W3DG7216V10AD1 W3DG721 |
128MB - 16Mx72 SDRAM, UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG7217V7D2 W3DG7217V10D2 W3DG7217V75D2 W3DG7217V |
128MB - 16Mx72 SDRAM UNBUFFERED
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| HYM71V16735HCLT8M-H HYM71V16735HCT8M-H HYM71V16735 |
16Mx72|3.3V|K/H|x9|SDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HYS64D64020GU-7-B HYS64D64320GU-5-B HYS64D64320GU- |
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (32Mx72) PC2100 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
184-Pin Unbuffered Dual-In-Line Memory Modules
DDR SDRAM Modules - 256MB (32Mx64) PC2100 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 2-bank
|
Infineon
|
| EUA5312QIR1 |
1.2 Gb, 16Mx72 DDR SDRAM 2 - W型立体声音频功率放大器四种可选增益设
|
Eutech Microelectronics, Inc.
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5DU281622DLT HY5DU281622DLT-X HY5DU281622DT HY5D |
DDR SDRAM - 128Mb
128MB-S DDR SDRAM
|
Hynix Semiconductor
|
| HY5DU281622DT-J HY5DU2842DT-J HY5DU2842DT-L HY5DU2 |
DDR SDRAM - 128Mb
|
Hynix Semiconductor
|
| HY5DU28422DT-X HYNIXSEMICONDUCTORINC.-HY5DU28822DT |
128Mb-S DDR SDRAM
|
Hynix Semiconductor Inc.
|
