PART |
Description |
Maker |
IBM13M32734CCA-360T |
x72 SDRAM Module 32M x 72 1 Bank Registered/Buffered SDRAM Module(32M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
KVR400X64C25/256 |
256MB 32M x 64-Bit DDR400
|
Kingston Technology
|
KVR400X72RC3A/256 |
256MB 32M x 72-Bit DDR400
|
Kingston Technology
|
KVR133X64C2/256 |
256MB 32M x 64-Bit PC133 CL2 168-Pin DIMM Module
|
Kingston Technology
|
EBD25UC8AMFA-6B EBD25UC8AMFA |
256MB Unbuffered DDR SDRAM DIMM 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC
|
HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200 Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KMM372F3200BS1 KMM372F3280BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
|
Samsung Semiconductor Co., Ltd.
|
TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位)的CMOS闪存EEPROM的(32M的8位与非的EEPROM
|
Toshiba Corporation Toshiba, Corp.
|
W3H32M72E-667ES W3H32M72E-667ESM W3H32M72E-667ESI |
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 32M × 72配置DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp. Honeywell International, Inc.
|