PART |
Description |
Maker |
V437432S24V |
3.3 VOLT 32M x 72 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM ECC MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
V827332K04S |
2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
AT45DB321B AT45DB321B-CC AT45DB321B-CI AT45DB321B- |
From old datasheet system 32M bit, 2.7-Volt Only Serial Interface Flash with two 528-Byte SRAM Buffers 32-megabit 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation]
|
KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
AT45DB321D-TU AT45DB321D-CNU AT45DB321D-MU AT45DB3 |
32-megabit 2.7-volt DataFlash 32M X 1 FLASH 2.7V PROM, DSO8
|
Atmel Corp. Atmel, Corp.
|
AT45DB321D-MU-SL955 AT45DB321D-MWU-SL955 AT45DB321 |
32-megabit 2.7-volt DataFlash 32M X 1 FLASH 2.7V PROM, PDSO8
|
ATMEL Corporation
|
AT49SN6416 |
64M bit and 32M, 1.8-Volt Burst and Page Mode Flash Memory
|
Atmel Corp
|
28F320C3 |
3 Volt Advanced Boot Block Flash Memory(3 V 高级快速引导块闪速存储器) 32M X 8 FLASH 3V PROM
|
Intel, Corp.
|
V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏,第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
KMM372F3200CS1 KMM372F3280CS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
|
Samsung Semiconductor Co., Ltd.
|