| PART |
Description |
Maker |
| UL634H256SA35G1 |
Low Voltage PowerStore 32K x 8 nvSRAM 低压PowerStore 32K的8非易
|
Electronic Theatre Controls, Inc.
|
| U634H256 U634H256S2K45G1 U634H256S2A25G1 U634H256S |
PowerStore 32K x 8 nvSRAM
|
SIMTEK[Simtek Corporation]
|
| U632H16 |
PowerStore 2K x 8 nvSRAM PowerStore 2K × 8非易
|
Electronic Theatre Controls, Inc.
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| P87C58X2FA P87C52 P87C54 80C52 80C52X2 P80C31X2 P8 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V, low power, high speed 30/33 MHz 8-BIT, MROM, 33 MHz, MICROCONTROLLER, PQFP44
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V, low power, high speed 30/33 MHz 80C51位单片机系列4K/8K/16K/32K的ROM / RAM的检察官办公28B/256B低电.7.5 V，低功耗，高33分之30兆赫
80C51 8-bit microcontroller family 4K-8K-16K-32K ROM-OTP 128B-256B RAM low voltage (2.7 to 5.5 V), low power, high speed (30-33 MHz)
|
存储
NXP Semiconductors N.V.
|
| 80C54X2 P80C34X2 P87C54X2BDH P80C32X2BBD P87C54X2B |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V, low power, high speed 30/33 MHz
|
PHILIPS[Philips Semiconductors]
|
| BS62LV256S BS62LV256TC BS62LV256SC BS62LV256TI BS6 |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| 27LV256 11024E |
256K (32K x 8) Low-Voltage CMOS EPROM
From old datasheet system
|
Microchip
|
| 74LVT16374 74LVTH16374 74LVT16374GX 74LVTH16374GX |
32K, 4K X 8, 2.5V SER EE EXT, -40C to 125C, 8-SOIC 208mil, T/R 触发器| 16位| D型|小型终端/ ALVT，BICMOS工艺| SSOP封装| 48PIN |塑料
Low Voltage 16-Bit D-Type Flip-Flop
From old datasheet system
Low Voltage 16-Bit D Flip-Flop with 3-STATE Outputs
|
ON Semiconductor
Fairchild Semiconductor
|
| BS62UV256TI BS62UV256 BS62UV256DC BS62UV256DI BS62 |
Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit 超低功率/电压CMOS SRAM2K的8
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
|
