PART |
Description |
Maker |
AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM(带单片使能 2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
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Alliance Semiconductor Corporation Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM 55ns; Ultra low power 128k x 8 CMOS SRAM 70ns; Ultra low power 128k x 8 CMOS SRAM 85ns; Ultra low power 128k x 8 CMOS SRAM
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G-LINK Technology
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BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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V62C1162048LL-120T V62C1162048LL-85B V62C1162048LL |
Ultra Low Power 128K x 16 CMOS SRAM 128K的超低功耗16 CMOS SRAM LCD Displays 10.4 inch (26.0 cm) 18-bit digital (6 bits/color) PROX
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Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp MOSEL[Mosel Vitelic Corp]
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GLT6400L08SL-85ST GLT6400L08LL-85ST GLT6400L08SLI- |
Ultra Low Power 512k x 8 CMOS SRAM 超低功率12k × 8 CMOS SRAM
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Electronic Theatre Controls, Inc.
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IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128K x 8 Ultra Low Power and Low VCC SRAM From old datasheet system 55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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HY62SF1640 HY62SF16403A HY62SF16403A-I HY62SF16403 |
256Kx16bit full CMOS SRAM High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
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Hynix Semiconductor
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BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8 Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
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Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
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N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48 8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
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ON Semiconductor
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BS616UV1010EIP10 BS616UV1010DIG10 BS616UV1010AI10 |
Ultra Low Power CMOS SRAM 64K X 16 bit 超低功耗CMOS SRAM 64K的16
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BRILLIANCE SEMICONDUCTOR, INC.
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UT621024SC-70L UT621024SC-70LL UT621024SC-35L UT62 |
128K X 8 BIT LOW POWER CMOS SRAM 128K的8位低功耗CMOS SRAM GT 8C 8#12 PIN PLUG
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Rochester Electronics, LLC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] UTRON Technology
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AS6WA25616-TI AS6WA25616-TC AS6WA25616-BI AS6WA256 |
3.0V to 3.6V 256K?6 IntelliwattTM low-power CMOS SRAM with one chip enable 3.0V to 3.6V 256K6 IntelliwattTM low-power CMOS SRAM with one chip enable 3.0V.6V 256K IntelliwattTM同一个芯片中低功耗CMOS SRAM的启 3.0V to 3.6V 256K X 6 IntelliwattTM low-power CMOS SRAM with one chip enable
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Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Alliance Semiconductor
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