| PART |
Description |
Maker |
| CQY37N CQY37N11 |
Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Siliconix
|
| TSUS4400AS12Z |
TSUS4400 - Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Semiconductors
|
| CQY36N CQY36N08 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| CQY37N08 CQY37N |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| TSUS4400 TSUS440008 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| TSAL5300-FSZ TSAL5300-GSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSUS520009 TSUS5201 TSUS5202 |
Infrared Emitting Diode, 950 nm, GaAs
Infrared Emitting Diode, 950 nm, GaAs
|
Vishay Siliconix
|
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-304L3 304L3 |
Infrared Emitting Diodes (IRED)
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSUS4400 |
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
GaAs Infrared Emitting Diode in 庐3 mm (T-1) Package
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
From old datasheet system
|
VISAY[Vishay Siliconix]
|
