| PART |
Description |
Maker |
| P8212 |
Light emitting/receiving module
|
HAMAMATSU[Hamamatsu Corporation]
|
| PSR11D PSR11L |
composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC at the light receiving side
|
KODENSHI KOREA CORP.
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| SBH52414N-FSAN SBH52414Z-FSAN SBH52414G-FSAN SBH52 |
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 高功率比迪光学标准模310纳米发光550纳米接收
2 GANG DEEP DEVICE BOX SCA-294
Components and FTTx solutions - Tx 1310nm/Rx 1550nm
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
|
INFINEON[Infineon Technologies AG]
|
| LNA2W01L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
|
Panasonic
|
| LT1ZR95A |
DEVICE SPECIFICATION FOR Light Emitting Diode
|
SHARP[Sharp Electrionic Components]
|
| LT1ZE40A |
DEVICE SPECIFICATION FOR . Light Emitting Diode
|
SHARP[Sharp Electrionic Components]
|
| GL6ZS27 |
DEVICE SPECIFICATION FOR Light Emitting Diode
|
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| GL5ZV44 |
DEVICE SPECIFICATION FOR Light Emitting Diode
|
Sharp Electrionic Components
|
| GL5ZR44 |
DEVICE SPECIFICATION FOR Light Emitting Diode
|
Sharp Electrionic Components
|
