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TGF4118-EPU - 18 mm Discrete HFET

TGF4118-EPU_1324844.PDF Datasheet


 Full text search : 18 mm Discrete HFET


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SIRENZA[SIRENZA MICRODEVICES]
AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging
10-Bit D-Type Latch
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器
8-Bit D-Type Latch 8位D型锁存器
Bourns, Inc.
HI3-0201HS4 HI3-0201HS5 HI1-0201HS2 HI1-0201HS5 HI Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0414-4 90; Contact Mating Area Plating: Tin
Interface IC 接口IC
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CGD942C Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
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20TQ040S 20TQ035S 20TQ045S 20TQ040 20TQ035STRR 20T 40V 20A Schottky Discrete Diode in a TO-220AC package
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TGF4118-EPU Lead forming TGF4118-EPU Package TGF4118-EPU Resistor TGF4118-EPU hot TGF4118-EPU philips
 

 

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