PART |
Description |
Maker |
TGF2022-06 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
TGF2022-12 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
TGF2022-48 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
TGF2021-04 |
DC - 12 GHz Discrete power pHEMT 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor, Inc. TRIQUINT SEMICONDUCTOR INC
|
TGF4230-SCC |
DC - 12 GHz Discrete HFET
|
TriQuint Semiconductor,Inc.
|
MJ15002 MJ15001 MJ15001-D |
Power 15A 140V Discrete PNP Power 15A 140V Discrete NPN Complementary Silicon Power Transistors
|
ON Semiconductor
|
10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 1000V 1A Ultra-Fast Discrete Diode in a SMB package 100V 1A Ultra-Fast Discrete Diode in a SMB package 200V 1A Ultra-Fast Discrete Diode in a SMB package 400V 1A Ultra-Fast Discrete Diode in a SMB package 600V 1A Ultra-Fast Discrete Diode in a SMB package 800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
|
CMM3566-LC-000T PB-CMM3566-LC |
3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3.45.5 GHz 7.0伏,24 dBm的的W - CDMA功率放大 3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3450 MHz - 3500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Mimix Broadband, Inc. MIMIX BROADBAND INC
|
BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.) From old datasheet system
|
Siemens Semiconductor Group Infineon
|
PE6815 PE6815-16 |
2 Watts Low Power Precision WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
PE6809-16 |
0.5 Watts Low Power Precision WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|