PART |
Description |
Maker |
NEZ6472-15B NEZ5258-4BD NEZ4450-8BD NEZ4450-8B NEZ |
C-BAND POWER GAAS MESFET C波段功率GaAs MESFET CAP 100UF 6V 20% TANT SMD-6032-28 TR-7
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET 3W L, S-BAND POWER GaAs MESFET 3W升,S波段功率GaAs MESFET
|
NEC Corp. NEC, Corp.
|
CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC INFINEON[Infineon Technologies AG]
|
NEZ1011-8E NEZ1414-8E |
8W X, Ku-BAND POWER GaAs MESFET 8瓦特十,KU波段功率GaAs MESFET 8W X / Ku-BAND POWER GaAs MESFET 8W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NE71083-07 NE710 NE71000 NE71083-06 NE71083-08 NE7 |
90 GHz, low noise Ku-K band GaAs MESFET LOW NOISE Ku-K BAND GaAs MESFET 低噪声谷K波段GaAs MESFET器件
|
NEC Corp. NEC, Corp.
|
30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 800V 3A Ultra-Fast Discrete Diode in a SMC package 400V 3A Ultra-Fast Discrete Diode in a SMC package 600V 3A Ultra-Fast Discrete Diode in a SMC package 100V 3A Ultra-Fast Discrete Diode in a SMC package 200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp. IRF[International Rectifier] VISHAY SEMICONDUCTORS
|
HI1-0507A2 HI1-0506A5 HI1-0507A5 HI1-0506A2 HI3-05 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0402-5 90; Contact Mating Area Plating: Tin Interface IC 接口IC
|
Intersil, Corp.
|
NE6500379 NE6500379A NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET
|
NEC
|
NE72218 NE72218-T1 |
C TO X BAND N-CHANNEL GaAs MESFET
|
California Eastern Labs
|
NE-720 |
General Purpose GaAs MESFET
|
NEC General Purpose GaAs MESFET
|