| PART |
Description |
Maker |
| NTE1056 NTE1449 NTE1453 NTE1862 NTE347 |
Integrated Circuit FM Stereo Multiplex Demodulator
Integrated Circuit Low Noise Eqalizer Amp
Integrated Circuit 2−Channel, Low Noise, Equalizier Amp
Integrated Circuit TV Vertrical Deflection Circuit
Silicon NPN Transistor
|
NTE[NTE Electronics]
|
| NTE955MC NTE955 |
Integrated Circuit CMOS Timing Circuit
|
NTE[NTE Electronics]
|
| TC55V11601FT-15 |
16,777,216-WORD BY 1-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| NTE1754 |
2.5-V Integrated Reference Circuit 8-SOIC 0 to 70
Integrated Circuit Vertical Deflection Output Circuit
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| KS9282B |
CMOS INTEGRATED CIRCUIT
|
Samsung semiconductor
|
| AC74HC40105AP TC74HC40105AF AC74HC697AP |
CMOS DIGITAL INTEGRATED CIRCUIT
|
TOSHIBA[Toshiba Semiconductor]
|
| TB1239BF |
Bi-CMOS Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Corporation
Toshiba, Corp.
|
| KS9211 |
Digital Signal Processor
CMOS INTEGRATED CIRCUIT
|
Samsung Electronic
Samsung semiconductor
|
| KIC7S14FU-15 |
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT
|
KEC(Korea Electronics)
|
