| PART |
Description |
Maker |
| SUD50P06-15L |
P-Channel, Tj = 175 °C power MOSFET; low leakage current; P通道，Tj=175℃，低漏电流
P-Channel 60-V (D-S), 175C MOSFET
P-Channel 60-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| SUD50N02-11P |
N-Channel 20-V (D-S) 175C MOSFET
N-Channel 20-V (D-S) 175∩ MOSFET
N-Channel 20-V (D-S) 175隆? MOSFET
N-Channel 20-V (D-S) 175?/a> MOSFET
|
Vishay Siliconix
|
| SUD10P06-280L SUU10P06-280L |
P-Channel 60-V (D-S), 175C MOSFET, Logic Level P通道60 -五（副）75 MOSFET的逻辑电平
P-Channel 60-V (D-S), 175 grades C MOSFET, Logic Level
P-Channel 60-V (D-S), 175C MOSFET, Logic Level
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N-channel enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| UPA1806GR-9JG UPA1806 UPA1806GR-9JG-E1 UPA1806GR-9 |
CONNECTOR ACCESSORY
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| UPA1874B UPA1874BGR-9JG UPA1874BGR-9JG-E1 UPA1874B |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
| UPA1809 UPA1809GR-9JG UPA1809GR-9JG-E1 UPA1809GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N Channel enhancement MOS FET
|
NEC, Corp.
NEC Corp.
|
| UPA620TT UPA620TT-E1 UPA620TT-E2 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
