| PART |
Description |
Maker |
| SUM09MN20-270 SUM09N20-270 |
N-Channel 200-V (D-S) 175C MOSFET
N-Channel 200-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUD19P06-60L |
P-Channel 60-V (D-S) 175C MOSFET P通道60 - V（下局副局长）175C MOSFET
|
VAISH[Vaishali Semiconductor]
|
| APT4020BVR |
POWER MOS V 400V 23A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| 2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
| APT8020B2FLL APT8020LFLL |
POWER MOS 7 800V 38A 0.200 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| RJK2006DPE-TL-E RJK2006DPF RJK2006DPJ |
Silicon N Channel MOS FET High Speed Power Switching
40 A, 200 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET LDPAK-3
|
Renesas Electronics Corporation
Glenair, Inc.
|
| SUM110N05-06L |
N-Channel 55-V (D-S) 175C MOSFET
|
VISHAY
|
| SUP90N08-06 |
N-Channel 75-V (D-S) 175C MOSFET
|
Vishay
|
| SUP75N08-09L SUB75N08-09L |
N-Channel 75-V (D-S), 175C MOSFET
|
Vishay Siliconix
|
