| PART |
Description |
Maker |
| STW12NC60 7175 |
N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET
|
ST Microelectronics
STMicroelectronics
|
| HGTG12N60D1 HGTG12N60D1D |
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
| STGP12NB60KD STGB12NB60KDT4 STGB12NB60KD 9655 |
N-CHANNEL 12A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF POWERMESH IGBT
From old datasheet system
|
STMicroelectronics
|
| IRG4PC30U IRG4PC30UPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| PR103W PR103K PR134K PR101W PR114K PR105KW PR125K |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|800V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|400V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|AC SWITCH|1.2KV V(RRM)|12A I(T) 可控硅模块|交流开关| 1.2KV五（无线资源管理）| 12A条疙（T
|
Stackpole Electronics, Inc.
|
| RJH60D2DPE-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D2DPP-M0-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| HGTP2N120BND HGT1S2N120BNDS HGT1S2N120BNDS9A |
12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N沟道绝缘栅双极型晶体
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 2 A, 1200 V, N-CHANNEL IGBT, TO-220AB
12 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRGBC30U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=12A)
|
IRF[International Rectifier]
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
