| PART |
Description |
Maker |
| STP3NB90FP |
N-CHANNEL 900 V - 4 OHM - 3.5 A - TO-220/TO-220FP POWERMESH MOSFET
|
ST Microelectronics
|
| IXCY01N90E |
900 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PLASTIC PACKAGE-3
|
IXYS, Corp.
|
| IRF450 IRF451 IRF452 IRF252 IRF250 IRF251 |
N-CHANNE POWER MOSFETS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| STC12IE90HV C12IE90HV |
Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| 2SK261009 2SK2610 |
5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Chopper Regulator, DC−DC Converter and Motor Drive Applications
|
Toshiba Semiconductor
|
| TMP93CU76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW44A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| IXFH16N90 |
HiPerFET Power MOSFETs 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| IXFX52N30Q IXFX16N90Q |
52 A, 300 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 900 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
|
