| PART |
Description |
Maker |
| MF1043S-1 |
FOR GSM MOBILE TELEPHONE / Rx
FOR GSM MOBILE TELEPHONE, Rx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MB3891 MB3891PFV |
Power Management IC for GSM Mobile Phone
|
Fujitsu Media Devices Limited
|
| MF1090V-3 |
FOR E-GSM MOBILE TELEPHONE, Rx 对于电子的GSM移动电话，接
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9080NBR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| PF0140 |
MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| TQM7M5013 |
Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module
|
TriQuint Semiconductor
|
| RF3133 RF3133PCBA-41X RF313305 |
QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE
|
RF Micro Devices
|
| SKY77351-13 |
SKY77351-13 POWER AMPLIFIER MODULE FOR QUAD-BAND GSM / GPRS / EDGE
|
Skyworks Solutions Inc.
|
