| PART |
Description |
Maker |
| SPB100N04S2-04 SPP100N04S2-04 |
Low Voltage MOSFETs - TO220/263; 100A; 40V; NL;3.6mohm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2L-06 SPB80N06S2L-06 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 6.3 mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2L-07 SPB80N06S2L-07 INFINEONTECHNOLOGIES |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 7 mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2-H5 SPB80N06S2-H5 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - TO220/263; 80A; 55V; NL; 5.5mOhm
|
INFINEON[Infineon Technologies AG]
|
| PPN0500B 542AB0500 915AB0500MBP |
HEATSINK TO220/218 5.0C/W
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
HEATSINK TO220/218 5.8C/W 散热片TO220/218 5.8摄氏
|
KEMET Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| KMD7D5P40QA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| KMB7D0DN40QB |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| KMD6D0DN40Q |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
