| PART |
Description |
Maker |
| SPP80N08S2-07 SPI80N08S2-07 SPB80N08S2-07 |
Low Voltage MOSFETs - TO220/263; 80 A; 75V; NL; 7,4 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2L-09 SPB80N06S2L-09 |
Low Voltage MOSFETs - TO220/263; 80A; 55V; LL; 8.5mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPP80N06S2-05 SPB80N06S2-05 |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; NL; 5.1 mOhm
OptiMOS Power-Transistor
2.00mm Pitch DIL Female Crimp Housing, 10 10-way
|
INFINEON[Infineon Technologies AG]
|
| IPB04N03LA IPP04N03LA IPI04N03LA |
OptiMOS 2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 4.2mOhm, 80A, LL
OptiMOS®2 - Power packages
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| HC55120CB HC55130IB |
Voltage Regulator IC; Output Current:2A; Output Voltage:5V; Package/Case:3-TO3P; Output Voltage Max:5.1V; Output Voltage Min:4.9V
IC-VLTG REG 6V TO220 ISO
|
Intersil Corporation
|
| APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
| KMD7D5P40QA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03 |
80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.8mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm
|
INFINEON[Infineon Technologies AG]
|
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL
OptiMOS Power-Transistor 的OptiMOS功率晶体
80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
|
INFINEON[Infineon Technologies AG]
|
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