| PART |
Description |
Maker |
| SMF-06020 |
Power Optimized GaAs FET
|
SAMSUNG[Samsung semiconductor]
|
| NES2527B-30 |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| CFH2162-P3 |
Power GaAs FET
|
Mimix Broadband
|
| MGF0909A_1 MGF0909A MGF0909A1 |
L,S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM0910-8 |
MICROWAVE POWER GaAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
| FLK017WF |
X, Ku Band Power GaAs FET
|
Eudyna Devices Inc
|
| TIM1011-4L |
MICROWAVE POWER GaAs FET
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MGF2415A1 MGF2415A |
MICROWAVE POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
